GD2 Series: IGBT/SiC MOSFET DC-DC Gate Driver
Product Strategy Center /Frank Chen
frank@meanwell.com
With the continuous advancement of semiconductor technology, IGBT (Insulated Gate Bipolar Transistor) and SiC (Silicon Carbide) devices are increasingly used across a wide range of applications, including electronic instrumentation, power supplies, data centers, renewable energy systems, and distributed circuits. In response to this growing demand, MEAN WELL has launched a new 2W DC-DC gate driver designed specifically for IGBT or SiC transistor applications requiring two sets of isolated power supplies - the GD2 Series.
The GD2 series features a modular design with a compact size, offering high isolation of 4.2KVac / 6KVdc and a variety of driver voltage models to choose from. Unlike traditional designs that draw auxiliary power from internal system transformers, the GD2 series offers several key advantages, such as simplifying the peripheral drive circuits on the PCB, improving voltage accuracy, eliminating the need for additional heat sinks, and enhancing isolation performance. The primary differences between these two driving approaches are detailed in the following table:
- SIP7 single row PIN international standard pinout
- -40~+90℃ natural convection cooled, no external heat sink required
- 4.2KVac / 6KVdc high isolation between input and output
- Protection: Short Circuit (sustainable)
- UL/EAC/CE/UKCA safety approved
- Dimensions (L x W x H): 19.5 x 9.8 x 12.5 mm
- 3 years warranty